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4 SF12G 3EZ170D P6KE150A SMBJ14CA 3EZ120D4 ZMM5229C 1N984 KBP208G ZMM55-B39 FR203 1N4107C FS1A SMAJ13 FR153 SMBJ5928 1N5527C DF02G 3EZ51D2 SK14 1N5934 SR102 FR103G SMAJ100A 1N5956D KBJ601G P4KE7.5C 1N5916A
型號 | 品牌 | 功能應用 |
---|---|---|
UF5400G | JGD | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 3.0 A. |
P4KE18 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 18 V. |
P4KE24 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 24 V. |
SF12G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A. |
3EZ170D | JGD | 3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-20% tolerance. |
P6KE150A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 150 V. |
SMBJ14CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 15.6 V (min), 17.2 V (max). Test current 1.0 mA. Bidirectional. |
3EZ120D4 | JGD | 3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-4% tolerance. |
ZMM5229C | JGD | Surface mount zener diode. Nominal zener voltage 4.3 V. Test current 20 mA. +-10% tolerance. |
1N984 | JGD | 0.5W, silicon zener diode. Zener voltage 91V. Test current 1.4mA. +-20% tolerance. |
KBP208G | JGD | Single-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V. |
ZMM55-B39 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 37-41 V. Test current 2.5 mA. +-2% tolerance. |
FR203 | JGD | 2.0A, fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
1N4107C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 13V. 2% tolerance. |
FS1A | JGD | 1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 50V. |
SMAJ13 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 13 V. |
FR153 | JGD | 1.5A, fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
SMBJ5928 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 13 V. Test current 28.8 mA. +-20% tolerance. |
1N5527C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-2% tolerance. |
DF02G | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200 V. |
3EZ51D2 | JGD | 3 W, silicon zener diode. Nominal voltage 51 V, current 15 mA, +-2% tolerance. |
SK14 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 1.0 A. |
1N5934 | JGD | 1.5 W, silicon zener diode. Zener voltage 24V. Test current 15.6 mA. +-20% tolerance. |
SR102 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward current 1.0 A. |
FR103G | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
SMAJ100A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V. |
1N5956D | JGD | 1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-1% tolerance. |
KBJ601G | JGD | Glass passivated single-phase bridge rectifier. Current 6.0 A. Max recurrent peak reverse voltage 100V. |
P4KE7.5C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 7.5 V. Bidirectional. |
1N5916A | JGD | 1.5 W, silicon zener diode. Zener voltage 4.3V. Test current 87.2 mA. +-10% tolerance. |