| 型號 | 品牌 | 功能應用 |
|---|
| MUR460 | JGD | 4.0A ultra fast rectifier. Max recurrent peak reverse voltage 600V. |
| 1N5944 | JGD | 1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-20% tolerance. |
| FR306 | JGD | 3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
| 1N4754A | JGD | 1W zener diode. Zener voltage 39V. |
| P6KE16CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V. Bidirectional. |
| SMBJ51CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 56.7 V (min), 62.7 V (max). Test current 1.0 mA. Bidirectional. |
| 1N4125C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 47V. 2% tolerance. |
| FR152 | JGD | 1.5A, fast recovery rectifier. Max recurrent peak reverse voltage 100V. |
| 1N4129C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 62V. 2% tolerance. |
| SMAJ43CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 43 V. Bidirectional. |
| 1N4741C | JGD | 1W zener diode. Nominal zener voltage 11V. 2% tolerance. |
| SR108 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward current 1.0 A. |
| SMBJ45CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 50.0 V (min), 55.3 V (max). Test current 1.0 mA. Bidirectional. |
| SMBJ5950B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 110 V. Test current 3.4 mA. +-5% tolerance. |
| 1N4738C | JGD | 1W zener diode. Nominal zener voltage 8.2V. 2% tolerance. |
| 1N5400G | JGD | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. |
| 1N4625D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 5.1V. 1% tolerance. |
| 3EZ22D10 | JGD | 3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-10% tolerance. |
| 1N5937B | JGD | 1.5 W, silicon zener diode. Zener voltage 33V. Test current 11.4 mA. +-5% tolerance. |
| ZMM55-D36 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 34-38 V. Test current 5 mA. +-20% tolerance. |
| P6KE10CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 10 V. Bidirectional. |
| P6KE30CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 30 V. Bidirectional. |
| RL201 | JGD | Silicon rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 2.0 A. |
| SMBJ51 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 56.7 V (min), 69.3 V (max). Test current 1.0 mA. |
| 1N4002 | JGD | 1.0A silicon rectifier. Max recurrent peak reverse voltage 100V. |
| 1N753 | JGD | 500mW, silicon zener diode. Zener voltage 6.2 V. Test current 20 mA. +-10% standard tolerance. |
| SMAJ78 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 78 V. |
| 3EZ20D4 | JGD | 3 W, silicon zener diode. Nominal voltage 20 V, current 37 mA, +-4% tolerance. |
| 3EZ11D10 | JGD | 3 W, silicon zener diode. Nominal voltage 11 V, current 68 mA, +-10% tolerance. |
| 1N964C | JGD | 0.5W, silicon zener diode. Zener voltage 13V. Test current 9.5mA. +-2% tolerance. |
