| 型號 | 品牌 | 功能應用 |
|---|
| 1EZ110D5 | JGD | 1 watt silicon zener diode. Nominal zener voltage 110V at 2.3mA. |
| 1N4737 | JGD | 1W zener diode. Nominal zener voltage 7.5V. 10% tolerance. |
| 3EZ3.9D5 | JGD | 3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-5% tolerance. |
| P6KE12A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. |
| 1N961B | JGD | 0.5W, silicon zener diode. Zener voltage 10V. Test current 12.5mA. +-5% tolerance. |
| 1N5929 | JGD | 1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-20% tolerance. |
| ZMM55-B5V6 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 5.2-6.0 V. Test current 5 mA. +-2% tolerance. |
| 1N5922A | JGD | 1.5 W, silicon zener diode. Zener voltage 7.5V. Test current 50 mA. +-10% tolerance. |
| SF14LG | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 1.0 A. |
| HA12G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 100V. |
| 1N4135D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 100V. 1% tolerance. |
| HA15 | JGD | 1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 400V. |
| P6KE30A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 30 V. |
| 1N4618 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 2.7V. |
| 1N975C | JGD | 0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. +-2% tolerance. |
| 3EZ28D5 | JGD | 3 W, silicon zener diode. Nominal voltage 28 V, current 27 mA, +-5% tolerance. |
| SMAJ54A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 54 V. |
| ZMM55-D22 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 20.8-23.3 V. Test current 5 mA. +-20% tolerance. |
| F1A2 | JGD | 1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 100 V. |
| P4KE82C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 82 V. Bidirectional. |
| MMBZ5228B | JGD | Surface mount zener diode. Nominal zener voltage 3.9V, test current 20.0mA. |
| 1N971B | JGD | 0.5W, silicon zener diode. Zener voltage 27V. Test current 4.6mA. +-5% tolerance. |
| 1N5539B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 19.0 V. Test current 1.0 mAdc. +-5% tolerance. |
| P6KE82 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 82 V. |
| KBU610 | JGD | Single phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V. |
| P6KE200 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. |
| SMBJ5913 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 3.3 V. Test current 113.6 mA. +-20% tolerance. |
| 1N981C | JGD | 0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. +-2% tolerance. |
| HER158 | JGD | 1.5 A, high efficiency rectifier. Max recurrent peak reverse voltage 1000V. |
| SMAJ18A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 18 V. |
