WMBT3906類似电子零件:

  • WMBT3904
    • NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
  • WMBT3904
    • NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
  • WMBT3906
    • PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
  • WMBT3906
    • PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
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    • NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V
  • WMBTA42
    • NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.
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WMBT3906 PDF資料和參數原理簡介

品牌 : WingShing 

封裝形式 : SOT-89 

引腳數量 : 3 

溫度範圍 : 最小 0 °C | 最大 0 °C

文件大小 : 72 KB

功能應用 : PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A 

WMBT3906 PDF資料下載