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BUT11A是什麽作用： NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
BUT11A類似电子零件：
- BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
- BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
- BUT11A
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
- BUT11AF
- NPN silicon diffused power transistor. For switching power circuits
- BUT12
- NPN silicon diffused power transistor. For switching power circuits
- BUT12A
- NPN silicon diffused power transistor. For switching power circuits
- BUT12AF
- NPN silicon diffused power transistor. For switching power circuits
BUT11A PDF資料和參數原理簡介
品牌 : WingShing
封裝形式 : TO-220
引腳數量 : 3
溫度範圍 : 最小 0 °C | 最大 0 °C
文件大小 : 24 KB
功能應用 : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
BUT11A PDF資料下載