F1060是什麽作用： 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060類似电子零件：

F1060
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1063
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1065
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060 PDF資料和參數原理簡介

封裝形式 :

引腳數量 : 2

溫度範圍 : 最小 -65 °C | 最大 150 °C

文件大小 : 41 KB

功能應用 : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor