F1020是什麽作用： Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1020類似电子零件：

F1020
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1021
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1022
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1027
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1020 PDF資料和參數原理簡介

封裝形式 :

引腳數量 : 4

溫度範圍 : 最小 -65 °C | 最大 150 °C

文件大小 : 43 KB

功能應用 : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor