F1016是什麽作用： Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1016類似电子零件：

F1012
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1014
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1015
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1016
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1018
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1019
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1016 PDF資料和參數原理簡介

封裝形式 :

引腳數量 : 4

溫度範圍 : 最小 -65 °C | 最大 150 °C

文件大小 : 45 KB

功能應用 : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor