F1007是什麽作用： Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1007類似电子零件：

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1004
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1005
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1006
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1007
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1007 PDF資料和參數原理簡介

封裝形式 :

引腳數量 : 4

溫度範圍 : 最小 -65 °C | 最大 150 °C

文件大小 : 41 KB

功能應用 : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor