PHX3N60E類似电子零件:

  • PHX3055E
    • 55 V, N-channel trenchMOS transistor
  • PHX3055L
    • 60 V, power MOS transistor logic level FET
  • PHX3N40E
    • 400 V, power MOS transistor avalanche energy rated
  • PHX3N40E
    • 400 V, power MOS transistor avalanche energy rated
  • PHX3N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX3N60E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX3N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHX3N60E
    • 600 V, power MOS transistor avalanche energy rated

PHX3N60E PDF資料和參數原理簡介

品牌 : Philips 

封裝形式 : SOT186A 

引腳數量 : 3 

溫度範圍 : 最小 -55 °C | 最大 150 °C

文件大小 : 80 KB

功能應用 : PowerMOS transistor. Avalanche energy rated. 

PHX3N60E PDF資料下載