MGW21N60ED是什麽作用： Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGW21N60ED類似电子零件：

MGW20N120
- Insulated Gate Bipolar Transistor N-Channel
MGW21N60ED
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGW21N60ED PDF資料和參數原理簡介

封裝形式 : TO-247

引腳數量 : 3

溫度範圍 : 最小 0 °C | 最大 0 °C

文件大小 : 167 KB

功能應用 : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel