| 型號 | 品牌 | 功能應用 |
|---|
| 1.5KE10A | MDE Semiconductor | 8.55V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SMBJ24 | MDE Semiconductor | 24.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| ICTE-12 | MDE Semiconductor | 12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 20KW172A | MDE Semiconductor | 172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| P4KE300 | MDE Semiconductor | 243.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MPTE-10C | MDE Semiconductor | 10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-34S621K | MDE Semiconductor | 620V; max peak current40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square |
| 15KP40 | MDE Semiconductor | 40.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| LCE16A | MDE Semiconductor | 16.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| SMLJ130A | MDE Semiconductor | 130.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 15KW45A | MDE Semiconductor | 45.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| P4KE160 | MDE Semiconductor | 130.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMBJ13A | MDE Semiconductor | 13.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMAJ30A | MDE Semiconductor | 30.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE160A | MDE Semiconductor | 136.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SA13 | MDE Semiconductor | 13.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SA64A | MDE Semiconductor | 64.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX20-90.0C | MDE Semiconductor | 90.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMBJ26A | MDE Semiconductor | 26.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE300A | MDE Semiconductor | 256.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 3KP13A | MDE Semiconductor | 13.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| P4KE56A | MDE Semiconductor | 47.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 30KW258 | MDE Semiconductor | 258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SA24 | MDE Semiconductor | 24.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 30KW240 | MDE Semiconductor | 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-34S241K | MDE Semiconductor | 240V; max peak current40000A; Tmax=11; metal oxide varistor. High energy series 34mm single square |
| LCE9.0 | MDE Semiconductor | 9.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| 15KP24A | MDE Semiconductor | 24.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| P6KE200 | MDE Semiconductor | 162.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KP17A | MDE Semiconductor | 17.0V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
