| 型號 | 品牌 | 功能應用 |
|---|
| SMLJ16 | MDE Semiconductor | 16.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SAC10 | MDE Semiconductor | 10.00V; 29.0A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode |
| MAX40-26.0C | MDE Semiconductor | 26.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE150 | MDE Semiconductor | 121.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| MAX40-26.0CA | MDE Semiconductor | 26.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX20-130.0CA | MDE Semiconductor | 130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SA90A | MDE Semiconductor | 90.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KP75 | MDE Semiconductor | 75V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 20KW44A | MDE Semiconductor | 44.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MAX20-26.0CA | MDE Semiconductor | 26.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| LCE12A | MDE Semiconductor | 12.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| MAX20-12.0C | MDE Semiconductor | 12.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ160 | MDE Semiconductor | 160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMDJ100A | MDE Semiconductor | 100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 20KW96A | MDE Semiconductor | 96.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-32D561K | MDE Semiconductor | 560V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
| MDE-20D301K | MDE Semiconductor | 300V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc |
| SMAJ170 | MDE Semiconductor | 170.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE51 | MDE Semiconductor | 41.30V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| MDE-53D182K | MDE Semiconductor | 1800V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
| 15KW200 | MDE Semiconductor | 200.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 1.5KE47 | MDE Semiconductor | 38.10V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SMCJ110A | MDE Semiconductor | 110.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SA40A | MDE Semiconductor | 40.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-14D271K | MDE Semiconductor | 270V; max peak current6000A; metal oxide varistor. Standard D series 14mm disc |
| P6KE51A | MDE Semiconductor | 43.60V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE120 | MDE Semiconductor | 97.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE62A | MDE Semiconductor | 53.00V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| P4KE27 | MDE Semiconductor | 21.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 3KP8.0 | MDE Semiconductor | 8.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
