| 型號 | 品牌 | 功能應用 |
|---|
| SR2A0 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 2.0 A. |
| 1N4107D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 13V. 1% tolerance. |
| 3EZ19D4 | JGD | 3 W, silicon zener diode. Nominal voltage 19 V, current 40 mA, +-4% tolerance. |
| 1N5954 | JGD | 1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-20% tolerance. |
| ZMM5253B | JGD | Surface mount zener diode. Nominal zener voltage 25 V. Test current 5.0 mA. +-5% tolerance. |
| 3EZ20D2 | JGD | 3 W, silicon zener diode. Nominal voltage 20 V, current 37 mA, +-2% tolerance. |
| KBPC306 | JGD | Single phase 3.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V. |
| 1N5531A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 11.0 V. Test current 1.0 mAdc. +-10% tolerance. |
| SMBJ5932B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 20 V. Test current 18.7 mA. +-5% tolerance. |
| 1N5536B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-5% tolerance. |
| ZMM5254A | JGD | Surface mount zener diode. Nominal zener voltage 27 V. Test current 4.6 mA. +-3% tolerance. |
| 1N974D | JGD | 0.5W, silicon zener diode. Zener voltage 36V. Test current 3.4mA. +-1% tolerance. |
| SMAJ36 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 36 V. |
| SMBJ18 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 20.0 V (min), 24.4 V (max). Test current 1.0 mA. |
| BZX84C12 | JGD | 350mW zener diode, 12V |
| HER107G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 800V. |
| 3EZ7.5D5 | JGD | 3 W, silicon zener diode. Nominal voltage 7.5 V, current 100 mA, +-5% tolerance. |
| P4KE51C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. Bidirectional. |
| ZMM5255D | JGD | Surface mount zener diode. Nominal zener voltage 28 V. Test current 4.5 mA. +-20% tolerance. |
| P4KE150A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 150 V. |
| ZMM55-C33 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 31-35 V. Test current 5 mA. +-5% tolerance. |
| F1A2G | JGD | 1.0 A glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 100 V. |
| KBPC1000G | JGD | Single phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V. |
| SMBJ85 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 94.4 V (min), 115 V (max). Test current 1.0 mA. |
| 1N5926B | JGD | 1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-5% tolerance. |
| KBJ406G | JGD | Glass passivated single-phase bridge rectifier. Forward current 4.0 A. Max recurrent peak reverse voltage 600V. |
| SMAJ5.0 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 5.0 V. |
| 3EZ82D5 | JGD | 3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-5% tolerance. |
| 1N5543 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-20% tolerance. |
| P4KE68CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 68 V. Bidirectional. |
