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J5943D 3EZ82D10 1N4740A KBP202 SMAJ17C P4KE82 MMBD1203 P6KE15A HER501 P6KE16A 1N4116C 3EZ91D5 KBU1008G 1N5523 P6KE16C 1N4129D MM4148 3EZ28D2 3EZ12D1 ZMM5226D 1N972 P4KE400CA BY298 RB157G 3EZ110D SMBJ5916B SMBJ9.0 SMBJ5925
型號 | 品牌 | 功能應用 |
---|---|---|
1N5949 | JGD | 1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-20% tolerance. |
BZX84C5V6 | JGD | 350mW zener diode, 5.6V |
SMBJ5943D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 56 V. Test current 6.7 mA. +-1% tolerance. |
3EZ82D10 | JGD | 3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-10% tolerance. |
1N4740A | JGD | 1W zener diode. Zener voltage 10V. |
KBP202 | JGD | Single-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V. |
SMAJ17C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V. Bidirectional. |
P4KE82 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 82 V. |
MMBD1203 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 200mA. |
P6KE15A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 15 V. |
HER501 | JGD | 5.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 50V. |
P6KE16A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V. |
1N4116C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 24V. 2% tolerance. |
3EZ91D5 | JGD | 3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-5% tolerance. |
KBU1008G | JGD | Single phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V. |
1N5523 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-20% tolerance. |
P6KE16C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V. Bidirectional. |
1N4129D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 62V. 1% tolerance. |
MM4148 | JGD | Surface mount switching diode. Peak reverse voltage 100V. Rectified current 150mA. |
3EZ28D2 | JGD | 3 W, silicon zener diode. Nominal voltage 28 V, current 27 mA, +-2% tolerance. |
3EZ12D1 | JGD | 3 W, silicon zener diode. Nominal voltage 12 V, current 63 mA, +-1% tolerance. |
ZMM5226D | JGD | Surface mount zener diode. Nominal zener voltage 3.3 V. Test current 20 mA. +-20% tolerance. |
1N972 | JGD | 0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. +-20% tolerance. |
P4KE400CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 400 V. Bidirectional. |
BY298 | JGD | 2.0A, fast recovery rectifier. Max recurrent peak reverse voltage 400V. |
RB157G | JGD | Miniature single phase 1.5 A. Glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
3EZ110D | JGD | 3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-20% tolerance. |
SMBJ5916B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 4.3 V. Test current 87.2 mA. +-5% tolerance. |
SMBJ9.0 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 10.0 V (min), 12.2 V (max). Test current 1.0 mA. |
SMBJ5925 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 10 V. Test current 37.5 mA. +-20% tolerance. |