| 型號 | 品牌 | 功能應用 |
|---|
| FR107L | JGD | "1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 1000V." |
| RC204 | JGD | Single phase 2 A. Single bridge rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 2 A. |
| 1N4741D | JGD | 1W zener diode. Nominal zener voltage 11V. 1% tolerance. |
| ZMM5253D | JGD | Surface mount zener diode. Nominal zener voltage 25 V. Test current 5.0 mA. +-20% tolerance. |
| 1N991B | JGD | "0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-5% tolerance." |
| MMBD914B | JGD | Surface mount switching diode. Max forward voltage 1.00V at 100mA. |
| TMPD7000 | JGD | Surface mount switching diode. Max forward voltage 0.75V at 100mA. |
| SMAJ43 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 43 V. |
| ZMM5232A | JGD | Surface mount zener diode. Nominal zener voltage 5.6 V. Test current 20 mA. +-3% tolerance. |
| 1N5931A | JGD | "1.5 W, silicon zener diode. Zener voltage 18V. Test current 20.8 mA. +-10% tolerance." |
| SMAJ33A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 33 V. |
| HER604 | JGD | 6.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 300V. |
| 1N5951B | JGD | 1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-5% tolerance. |
| 6A10 | JGD | 6.0 A silicon rectifier. Max recurrent peak reverse voltage 1000 V. |
| FR154 | JGD | 1.5A, fast recovery rectifier. Max recurrent peak reverse voltage 400V. |
| 1N5530B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-5% tolerance. |
| 1N753C | JGD | 500mW, silicon zener diode. Zener voltage 6.2 V. Test current 20 mA. +-2% tolerance. |
| SMAJ6.0A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.0 V. |
| SMAJ18 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 18 V. |
| SMBJ26C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 28.9 V (min), 35.3 V (max). Test current 1.0 mA. Bidirectional. |
| ZMM5223D | JGD | Surface mount zener diode. Nominal zener voltage 2.7 V. Test current 20 mA. +-20% tolerance. |
| KBPC600G | JGD | Single phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V. |
| 1N5942 | JGD | 1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-20% tolerance. |
| P6KE68CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 68 V. Bidirectional. |
| P4KE47CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 47 V. Bidirectional. |
| P4KE9.1C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 9.1 V. Bidirectional. |
| ZMM5261A | JGD | Surface mount zener diode. Nominal zener voltage 47 V. Test current 2.7 mA. +-3% tolerance. |
| 1EZ150D5 | JGD | 1 watt silicon zener diode. Nominal zener voltage 150V at 1.7mA. |
| IN5404 | JGD | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
| 1N971C | JGD | 0.5W, silicon zener diode. Zener voltage 27V. Test current 4.6mA. +-2% tolerance. |
