| 型號 | 品牌 | 功能應用 |
|---|
| SMAJ64 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 64 V. |
| SMBJ64C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 71.1 V (min), 86.9 V (max). Test current 1.0 mA. Bidirectional. |
| KBU801G | JGD | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100V. |
| ZMM5245C | JGD | Surface mount zener diode. Nominal zener voltage 15 V. Test current 8.5 mA. +-10% tolerance. |
| ES2D | JGD | 2.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 200 V. |
| 3EZ18D2 | JGD | 3 W, silicon zener diode. Nominal voltage 18 V, current 42 mA, +-2% tolerance. |
| KBU1006G | JGD | Single phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600V. |
| SMAJ160 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V. |
| 1N5943D | JGD | 1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-1% tolerance. |
| 1N4742 | JGD | 1W zener diode. Nominal zener voltage 12V. 10% tolerance. |
| SMBJ5915D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 3.9 V. Test current 96.1 mA. +-1% tolerance. |
| S3M | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 3.0 A. |
| SMAJ30C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 30 V. Bidirectional. |
| 3EZ10D4 | JGD | 3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-4% tolerance. |
| P4KE350C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V. Bidirectional. |
| 1N4002L | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 100V. |
| 1N5949D | JGD | 1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-1% tolerance. |
| KBPC301G | JGD | Single phase 3.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100V. |
| 1N970B | JGD | 0.5W, silicon zener diode. Zener voltage 24V. Test current 5.2mA. +-5% tolerance. |
| ZMM55-C43 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 40-46 V. Test current 2.5 mA. +-5% tolerance. |
| ZMM55-C36 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 34-38 V. Test current 5 mA. +-5% tolerance. |
| 1N4106D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 12V. 1% tolerance. |
| P4KE11A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 11 V. |
| 1N5542A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 24.0 V. Test current 1.0 mAdc. +-10% tolerance. |
| P4KE27CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 27 V. Bidirectional. |
| ZMM5246C | JGD | Surface mount zener diode. Nominal zener voltage 16 V. Test current 7.8 mA. +-10% tolerance. |
| SMAJ30 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 30 V. |
| 3EZ150D1 | JGD | 3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-1% tolerance. |
| SMBJ5937C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 33 V. Test current 11.4 mA. +-2% tolerance. |
| FR203G | JGD | 2.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
