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IRG4BC30U-S是什麽作用： Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRG4BC30U-S類似电子零件：
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- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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IRG4BC30U-S PDF資料和參數原理簡介
品牌 : IR
封裝形式 : DDPak
引腳數量 : 3
溫度範圍 : 最小 -55 °C | 最大 150 °C
文件大小 : 338 KB
功能應用 : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRG4BC30U-S PDF資料下載