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IRF9Z14是什麽作用： HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -6.7A
IRF9Z14類似电子零件：
- IRF9130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
- IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
- IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
- IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9Z14 PDF資料和參數原理簡介
品牌 : IR
封裝形式 :
引腳數量 : 3
溫度範圍 : 最小 -55 °C | 最大 175 °C
文件大小 : 190 KB
功能應用 : HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -6.7A
IRF9Z14 PDF資料下載