導航：OK电子零件資料網 > 电子零件器品牌 > IR Datasheet > IRF5210S
IRF5210S是什麽作用： HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5210S類似电子零件：
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5210S PDF資料和參數原理簡介
品牌 : IR
封裝形式 : DDPak
引腳數量 : 3
溫度範圍 : 最小 -55 °C | 最大 175 °C
文件大小 : 204 KB
功能應用 : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5210S PDF資料下載