IRF140是什麽作用： Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A.

IRF140類似电子零件：

IRF1010E
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
IRF1010EL
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
IRF1010ES
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
IRF1010N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
IRF1010NL
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
IRF1010NS
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
IRF1104
- HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A.
IRF130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A

IRF140 PDF資料和參數原理簡介

品牌 : IR

封裝形式 : TO-204AA

引腳數量 : 3

溫度範圍 : 最小 -55 °C | 最大 175 °C

文件大小 : 158 KB

功能應用 : Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A.