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PBC 300UR5A IRF520VS IRF9640 SD300R28MC IR6210 IRFBA90N20D IRU1205-28CL SD600R28PTC 305UA160 IRFPG30 IR2128S IR6216 309UR200 SD403C12S10C SD200N16PBV 301U250P3 ST230C08C0 IRL620S SD403C10S15C ST2600C30R1L ST103S04PFN2L IR2118S ST330C04C3 SD203R08S10PBC IRF2807 IRC644 SD153R10S10P
型號 | 品牌 | 功能應用 |
---|---|---|
IRGPH50F | IR | Insulated gate bipolar transistor |
SD103R04S15PBC | IR | Fast recovery diode |
300UR5A | IR | Standard recovery diode |
IRF520VS | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A |
IRF9640 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.50 Ohm, ID = -11A |
SD300R28MC | IR | Standard recovery diode |
IR6210 | IR | Intelligent high side mosfet power switch |
IRFBA90N20D | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.023 Ohm, ID = 98A |
IRU1205-28CL | IR | 300mA ultra low dropout positive fixed 2.8V regulator |
SD600R28PTC | IR | Standard recovery diode |
305UA160 | IR | Standard recovery diode |
IRFPG30 | IR | HEXFET power MOSFET. VDSS = 1000 V, RDS(on) = 5.0 Ohm, ID = 3.1 A |
IR2128S | IR | Current sensing single channel driver |
IR6216 | IR | Intelligent high side mosfet power switch |
309UR200 | IR | Standard recovery diode |
SD403C12S10C | IR | Fast recovery diode |
SD200N16PBV | IR | Standard recovery diode |
301U250P3 | IR | Standard recovery diode |
ST230C08C0 | IR | Phase control thyristor |
IRL620S | IR | HEXFET power mosfet |
SD403C10S15C | IR | Fast recovery diode |
ST2600C30R1L | IR | Phase control thyristor |
ST103S04PFN2L | IR | Inverter grade thyristor |
IR2118S | IR | Single channel driver |
ST330C04C3 | IR | Phase control thyristor |
SD203R08S10PBC | IR | Fast recovery diode |
IRF2807 | IR | Power MOSFET, 75V, 82A |
IRC644 | IR | HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm |
SD153R10S10PV | IR | Fast recovery diode |
45LR160D | IR | Standard recovery diode |