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72UF20A 45L80 309UR120P4 IRFZ44ESTRL SD600N12MSC ST3230C18R3 IRHNA9064 SD200OC08L SD150R12MSC SD203N20S10PSC IR2113-2 IRHM9230 112RKI80 SD600N20MSC 45LR30 SD103N10S20MC IRG4PC40KD IRF5N3205 ST173S12MFK1 ST333S08MFM0L SD153N10S10PBV ST280S06P1VL IRGBC30K-S IRG4RC10KD SD30OC12C IR
型號 | 品牌 | 功能應用 |
---|---|---|
ST300C08L1L | IR | Phase control thyristor |
IRFR024N | IR | Power MOSFET, 55V, 17A |
72UF20A | IR | Standard recovery diode |
45L80 | IR | Standard recovery diode |
309UR120P4 | IR | Standard recovery diode |
IRFZ44ESTRL | IR | N-channel power MOSFET for fast switching applications, 60V, 48A |
SD600N12MSC | IR | Standard recovery diode |
ST3230C18R3 | IR | Phase control thyristor |
IRHNA9064 | IR | HEXFET transistor |
SD200OC08L | IR | Standard recovery diode |
SD150R12MSC | IR | Standard recovery diode |
SD203N20S10PSC | IR | Fast recovery diode |
IR2113-2 | IR | High and low side driver |
IRHM9230 | IR | HEXFET transistor |
112RKI80 | IR | Phase control thyristor |
SD600N20MSC | IR | Standard recovery diode |
45LR30 | IR | Standard recovery diode |
SD103N10S20MC | IR | Fast recovery diode |
IRG4PC40KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A |
IRF5N3205 | IR | HEXFET power MOSFET surface mount. BVDSS = 55V, RDS(on) = 0.008 Ohm, ID = 55A |
ST173S12MFK1 | IR | Inverter grade thyristor |
ST333S08MFM0L | IR | Inverter grade thyristor |
SD153N10S10PBV | IR | Fast recovery diode |
ST280S06P1VL | IR | Phase control thyristor |
IRGBC30K-S | IR | Insulated gate bipolar transistor |
IRG4RC10KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A |
SD30OC12C | IR | Standard recovery diode |
IRF640STRL | IR | N-channel power MOSFET for fast switching applications, 200V, 18A |
302UFR120YPD | IR | Standard recovery diode |
305UA120P2 | IR | Standard recovery diode |