HMBT5551是什麽作用： Emitter to base voltage6V; 600mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltage

HMBT5551類似电子零件：

HMBT1015
- 5V 150mA PNP epitaxial planar transistor for use in driver stage of AF amplifier and general purpose amplification
HMBT1015
- 5V 150mA PNP epitaxial planar transistor for use in driver stage of AF amplifier and general purpose amplification
HMBT1815
- 5V 150mA NPN epitaxial planar transistor for use in driver stage of AF amplifier and general purpose amplification
HMBT2222A
- 6V 600mA NPN epitaxial planar transistor for general purpose amplifier and high-speed switching, medium-power switching applications
HMBT2369
- 40V 500mA NPN epitaxial planar transistor for general purpose switching and amplifier applications
HMBT2484
- 6V 50mA NPN epitaxial planar transistor
HMBT2907A
- 5V 600mA PNP epitaxial planar transistor for general purpose amplifier and high-speed switching, medium power swithcing applications
HMBT3904
- 6V 200mA NPN epitaxial planar transistor for general purpose switching amplifier applications

HMBT5551 PDF資料和參數原理簡介

封裝形式 : SOT-23

引腳數量 : 3

溫度範圍 : 最小 0 °C | 最大 0 °C

文件大小 : 34 KB

功能應用 : Emitter to base voltage6V; 600mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltage