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HY51V18163HGT-6是什麽作用： Dynamic RAM organized 1,048,576 words x 16bit, 60ns
HY51V18163HGT-6類似电子零件：
- HY51V17403HGJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGLJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLJ-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGLT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
- HY51V18163HGJ-7
- Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51V18163HGT-6 PDF資料和參數原理簡介
品牌 : HYNIX
封裝形式 : TSOP II
引腳數量 : 44
溫度範圍 : 最小 0 °C | 最大 70 °C
文件大小 : 117 KB
功能應用 : Dynamic RAM organized 1,048,576 words x 16bit, 60ns
HY51V18163HGT-6 PDF資料下載