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W6NXD0KLSR-0000是什麽作用： Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W6NXD0KLSR-0000類似电子零件：

W6NXD0K-0000
- Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W6NXD0KLSR-0000
- Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W6NXD3J-0000
- Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W6NXD3K-0000
- "Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition"

W6NXD0KLSR-0000 PDF資料和參數原理簡介

品牌 : Cree

封裝形式 :

引腳數量 : 0

溫度範圍 : 最小 0 °C | 最大 0 °C

文件大小 : 306 KB

功能應用 : Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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W6NXD0KLSR-0000類似电子零件：

W6NXD0KLSR-0000 PDF資料和參數原理簡介

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