| 型號 | 品牌 | 功能應用 |
|---|
| 2SD1910 | WingShing | Silicon diffused power transistor. |
| 2SD869 | WingShing | Silicon diffused power transistor. |
| 2SD1175 | WingShing | NPN tripple diffused planar silicon transistor. Color TV horizontal output applications(damper diode BUILTIN) |
| SMA5818 | WingShing | Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 30V. Max RMS bridge input voltage 21V. Max DC blocking voltage 30V. |
| 2SB688 | WingShing | PNP planar silicon transistor. Audio power amplifier DC to DC converter. |
| 1N5400 | WingShing | Silicon rectifier. Max recurrent peak reverse voltage 50V. Max RMS voltage 35V. Max DC blocking voltage 50V. Current 3.0A |
| 2SD718 | WingShing | NPN planar silicon transistor. Audio power amplifier DC to DC converter |
| SMA4006 | WingShing | Surface mount silicon rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS bridge input voltage 560V. Maximum DC blocking voltage 800V. |
| 2SA986A | WingShing | PNP epitaxial silicon transistor. Low erequency power amplifier. |
| 2SB507 | WingShing | PNP epitaxial silicon transistor. Low frequency power amplifier. |
| 2SD717 | WingShing | Silicon epitaxial planar transistor. |
| 2SD389 | WingShing | NPN epitaxial silicon transistor. Low frequency power amplifier |
| 2SA985 | WingShing | PNP epitaxial silicon transistor. Low erequency power amplifier. |
| 2SB827 | WingShing | PNP planar silicon transistor. PSW/D/DDC |
| 2SB945 | WingShing | PNP epitaxial silicon transistor. Power amplifier vertical deflection output. |
| DB4 | WingShing | Bi-directional trigger diode. Breakdown voltage (typ) 40V. Breakdown voltage symmetry (max) 3V. Dynamic breakback voltage (min) 5V. |
| FR105 | WingShing | Fast recovery rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V. |
| TIP3055 | WingShing | NPN planar silicon transistor. Audio power amplifier. DC to DC converter. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 6V |
| KBPC3501 | WingShing | Single-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 100V. Maximum RMS bridge input voltage 70V. Maximum DC blocking voltage 100V |
| BUT11 | WingShing | NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V. |
| HC-49/S | WingShing | Crystal unit. Nominal frequency 3.579545-27.00MHz |
| 2SD1148 | WingShing | NPN planar silicon transistor. Audio power amplifier, DC to DC converter |
| WMBT3904 | WingShing | NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A |
| 2SD1128 | WingShing | NPN silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers |
| 78L12ACZ | WingShing | Positive-voltage regulator. Output current up to 100mA |
| MJ11015 | WingShing | PNP silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers |
| 2SA1301 | WingShing | PNP planar silicon transistor. Audio power amplifier DC to DC converter. |
| 2SC3854 | WingShing | NPN planar silicon transistor. Audio power amplifier DC to DC converter |
| 78L18ACZ | WingShing | Positive-voltage regulator. Output current up to 100mA |
| SMA4001 | WingShing | Surface mount silicon rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS bridge input voltage 35V. Maximum DC blocking voltage 50V. |
