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3 28LV64TM-6 TU25C128SC-2.7 28C64AJI-1 28LV256TC-4 TU24C64CS3 28LV256JC-6 29C010TM-2 28LV256JC-5 28LV64PI-3 29C010JM-1 TU24C04CS3 28LV256TC-5 28LV256TM-6 29C021TM-3 29C021JI-3 29C010PM-2 28LV64TC-5 TU24C02CP3 28C256AJM-2 28C256API-2 TU24C32CS3 28LV256PI-4 28LV64PI-5 28C64ATC-3 29
型號 | 品牌 | 功能應用 |
---|---|---|
28C64AJM-1 | Turbo IC | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. |
29C010PC-3 | Turbo IC | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. |
28LV64TM-6 | Turbo IC | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. |
TU25C128SC-2.7 | Turbo IC | CMOS SPI bus. 128K electrically erasable programmable ROM. 16K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
28C64AJI-1 | Turbo IC | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. |
28LV256TC-4 | Turbo IC | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
TU24C64CS3 | Turbo IC | CMOS IIC 2-wire bus. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
28LV256JC-6 | Turbo IC | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
29C010TM-2 | Turbo IC | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
28LV256JC-5 | Turbo IC | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV64PI-3 | Turbo IC | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. |
29C010JM-1 | Turbo IC | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. |
TU24C04CS3 | Turbo IC | CMOS IIC 2-wire bus. 4K electrically erasable programmable ROM. 512 x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
28LV256TC-5 | Turbo IC | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV256TM-6 | Turbo IC | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
29C021TM-3 | Turbo IC | High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
29C021JI-3 | Turbo IC | High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
29C010PM-2 | Turbo IC | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
28LV64TC-5 | Turbo IC | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. |
TU24C02CP3 | Turbo IC | CMOS IIC 2-wire bus. 2K electrically erasable programmable ROM. 256 x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
28C256AJM-2 | Turbo IC | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C256API-2 | Turbo IC | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
TU24C32CS3 | Turbo IC | CMOS IIC 2-wire bus. 32K electrically erasable programmable ROM. 4K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
28LV256PI-4 | Turbo IC | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV64PI-5 | Turbo IC | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. |
28C64ATC-3 | Turbo IC | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. |
29C010PC-1 | Turbo IC | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. |
28C256ASI-2 | Turbo IC | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C64ATI-1 | Turbo IC | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. |
28C256AJM-1 | Turbo IC | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |