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1SMB5936 1N5399 ER3G P6KE75C CP3010 P4KE15CA GBPC1506 UF100 MMBZ5251B MMBZ5231BW 3.0SMCJ45C 3EZ19 MMSZ5259B SA170 UF3D 3.0SMCJ33C 3KP20 1N4933 SD830YT 15KP45CA PG101R P6SMBJ16C MMSZ5258B SB180 SS12 BZT52-C4V7S 3.0SMCJ8.0CA GBJ8K

PanJit 元件資料手冊列表-10

型號品牌功能應用
BZX84C5V1W PanJitSurface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 5.1 V
SB830FCT PanJitIsolation schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 100degC 8 A.
1SMB5936 PanJitSurface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 30 V. Test current Izt = 12.5 mA
1N5399 PanJitPlastic silicon rectifier. Max reccurent peak reverse voltage 1000V. Max average forward rectified current 1.5A.
ER3G PanJitSurface mount rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current 3.0 A.
P6KE75C PanJitGlass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 60.70V, Vbr(min/max) = 67.50/82.50V, It = 1 mA.
CP3010 PanJitSingle-phase silicon bridge-P.C. MTG 2A, heat-sink MTG 3A . Max recurrent peak reverse voltage 1000V. Max average rectified output 3.0A(at Tc=50), 2.0(at Ta=25).
P4KE15CA PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 12.80V, Vbr(min/max) = 14.30/15.80V, It = 1 mA.
GBPC1506 PanJitHigh current silicon bridge rectifier. Max recurrent peak reverse voltage 600 V. Max average forward current for resistive load at Tc=55degC 15 A.
UF100 PanJitUltrafast switching rectifier. Peak reverse voltage 50 V. Average forward current 1.0 A.
MMBZ5251B PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 22 V @ Izt. 500 mWatts zener diode.
MMBZ5231BW PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 5.1 V @ Izt. 200 mWatts zener diode.
3.0SMCJ45C PanJitSurface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 45 V. Vbr(max/min) = 50.0/63.3 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 80.3 V @ Ipp = 37.4 A.
3EZ19 PanJitGlass passivated junction silicon zener. Power 3.0 Watts. Vz = 19 V. Izt = 40 mA.
MMSZ5259B PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 39 V @ Izt. 500 mWatts zener diode.
SA170 PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 170.00V, Vbr(min/max) = 189.00/239.50V, It = 1 mA.
UF3D PanJitSurface mount ultrafast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 3.0 A.
3.0SMCJ33C PanJitSurface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 33 V. Vbr(max/min) = 36.7/46.5 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 59.0 V @ Ipp = 50.4 A.
3KP20 PanJitGlass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 20.00 V. Vbr = 22.20 V (min), 28.10 V (max). It = 1 mA.
1N4933 PanJitFast switching plastic rectifier. Maximum recurrent peak reverse voltage 50V. Maximum average forward rectified gurrent 1A
SD830YT PanJitSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 85degC 8.0 A.
15KP45CA PanJitGlass passivated junction transient voltage suppressor. Vrwm = 45 V. Vbr(min/max) = 50.0/57.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 72.7 V @ Ipp = 205 A.
PG101R PanJitGlass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 100 A. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.0 A.
P6SMBJ16C PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 16 V. Vbr(min/max) = 17.8/22.6 V. It = 1.0 mA. Ir = 5 uA. Vc = 28.8 V. Ipp = 20.8 A.
MMSZ5258B PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 36 V @ Izt. 500 mWatts zener diode.
SB180 PanJitSchottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current 0.375inches lead length at Ta = 75degC 1.0 A.
SS12 PanJitSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward current 1.0 A.
BZT52-C4V7S PanJitSurface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 4.7 V
3.0SMCJ8.0CA PanJitSurface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 8.0 V. Vbr(max/min) = 8.89/10.23 V @ It = 1.0 mA. Ir = 100 uA @ Vrwm. Vc = 13.6 V @ Ipp = 220.6 A.
GBJ8K PanJitGlass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 8.0A(Tc=100degC), 6.0A(Ta=45degC).

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