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Leshan Radio公司官方網站

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型號功能應用
1N5820 20 V, 3 A, schottky barrier diode
P4KE39A 39 V, 1 mA, 400 W, transient voltage suppressor
FM405 600 V, 1 A, glass passivated SMA diode
MMBT2222LT1 30 V, general purpose transistor
P6KE15A 15 V, 1 mA, 600 W, transient voltage suppressor
1N5254D 27 V, 4.6 mA, zener diode
M1MA151WAT1 40 V, 100 mA, common anode silicon dual switching diode
BZX84C4V7LT1 4.7 V, 225 mW, semiconductor
BC848CWT1 30 V, general purpose transistor
HER303G 200 V, 3 A, high efficiency GPP diode
BR610 1000 V, 6 A, bridge rectifier
05WS3B 400 mW, 5 mA, zener diode
MTZJ39D 39 V, 5 mA, zener diode
SMAJ5.0 5.0 V, 10 mA, transient voltage suppressor
DTC144EKA 50 V, digital transistor
FR106G 800 V, 1 A fast GPP diode
P6KE150 150 V, 1 mA, 600 W, transient voltage suppressor
SMAJ54 54 V, 1 mA, transient voltage suppressor
1N5272D 110 V, 1.1 mA, zener diode
D15SB80 800 V, 15 A, bridge rectifier
1N4753A 36 V, zener diode
KBPC602 200 V, 6 A, bridge rectifier
P6KE220 220 V, 1 mA, 600 W, transient voltage suppressor
BZX84C8V2LT1 8.2 V, 225 mW, semiconductor
RS401 50 V, 4 A, bridge rectifier
1N4372A 3 V, 20 mA, zener diode
SA36 36 V, 1 mA, 500 W, transient voltage suppressor
FR107P 1000 V, 1 A, fast recovery diode

Leshan Radio公司簡介

Leshan Radio Company Co., Ltd.

Leshan Radio Company Co Ltd.元件資料手冊列表

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