| 型號 | 品牌 | 功能應用 |
|---|
| 1N5518D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-1% tolerance. |
| 1N759D | JGD | 500mW, silicon zener diode. Zener voltage 12.0 V. Test current 20 mA. +-1% tolerance. |
| S2B | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.5 A. |
| 1N5930B | JGD | 1.5 W, silicon zener diode. Zener voltage 16V. Test current 23.4 mA. +-5% tolerance. |
| P6KE56 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 56 V. |
| ZMM55-B6V2 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 5.8-6.6 V. Test current 5 mA. +-2% tolerance. |
| SMAJ100 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V. |
| SMBJ6.5CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 7.22 V (min), 7.98 V (max). Test current 10.0 mA. Bidirectional. |
| HER103G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
| ZMM5257A | JGD | Surface mount zener diode. Nominal zener voltage 33 V. Test current 3.8 mA. +-3% tolerance. |
| 1N5534 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 14.0 V. Test current 1.0 mAdc. +-20% tolerance. |
| BY251 | JGD | 3.0 A silicon rectifier. Max recurrent peak reverse voltage 200 V. |
| SMAJ110CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 110 V. Bidirectional. |
| KBPC608 | JGD | Single phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V. |
| HER305 | JGD | 3.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 400V. |
| P4KE12CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. Bidirectional. |
| 1W06 | JGD | Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600 V. |
| 1N4755 | JGD | 1W zener diode. Nominal zener voltage 43V. 10% tolerance. |
| SMBJ5941C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 47 V. Test current 8.0 mA. +-2% tolerance. |
| P4KE47A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 47 V. |
| 1N4108D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 14V. 1% tolerance. |
| HER101L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V. |
| 3EZ6.8D | JGD | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-20% tolerance. |
| 3EZ3.9D3 | JGD | 3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-3% tolerance. |
| 1N4624C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 4.7V. 2% tolerance. |
| P6KE220A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 220 V. |
| 1W04 | JGD | Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 400 V. |
| 1N4747D | JGD | 1W zener diode. Nominal zener voltage 20V. 1% tolerance. |
| P4KE16A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V. |
| P6KE110A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. |
