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50 IRF720 ST300C08L3L SD103N10S20PC SD400N08MBC IRF7701 IRGBC20U ST1230C14K2L SD600R08PC 300HFR120P 302U40A SD453R20S20MC 305UA200P4 SD253R12S20MSV ST183C04CHK2L 307U120P3 SD203N08S15PC ST180S08P1L SD103R10S15MSC SD103N04S15MC SD203N10S20MBC 301UR250P4 SD203R20S10MSC 305UA200 ST1
型號 | 品牌 | 功能應用 |
---|---|---|
SD253R16S15PSV | IR | Fast recovery diode |
IRFP350 | IR | HEXFET power MOSFET. VDSS = 400 V, RDS(on) = 0.30 Ohm, ID = 16 A |
IRF720 | IR | N-channel HEXFET, 400V, 3.3A |
ST300C08L3L | IR | Phase control thyristor |
SD103N10S20PC | IR | Fast recovery diode |
SD400N08MBC | IR | Standard recovery diode |
IRF7701 | IR | HEXFET power MOSFET. VDSS = -12V, RDS(on) = 0.011 Ohm, ID = -10A @ VGS = -4.5V. RDS(on) = 0.015 Ohm, ID = -8.5A @ VGS = -2.5V. RDS(on) = 0.022 Ohm, ID = -7.0A @ VGS = -1.8V. |
IRGBC20U | IR | Insulated gate bipolar transistor |
ST1230C14K2L | IR | Phase control thyristor |
SD600R08PC | IR | Standard recovery diode |
300HFR120P | IR | Standard recovery diode |
302U40A | IR | Standard recovery diode |
SD453R20S20MC | IR | Fast recovery diode |
305UA200P4 | IR | Standard recovery diode |
SD253R12S20MSV | IR | Fast recovery diode |
ST183C04CHK2L | IR | Inverter grade thyristor |
307U120P3 | IR | Standard recovery diode |
SD203N08S15PC | IR | Fast recovery diode |
ST180S08P1L | IR | Phase control thyristor |
SD103R10S15MSC | IR | Fast recovery diode |
SD103N04S15MC | IR | Fast recovery diode |
SD203N10S20MBC | IR | Fast recovery diode |
301UR250P4 | IR | Standard recovery diode |
SD203R20S10MSC | IR | Fast recovery diode |
305UA200 | IR | Standard recovery diode |
ST1900C50R1 | IR | Phase control thyristor |
IRC630 | IR | HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm |
IRFI1010N | IR | HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A |
IRFIZ24V | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.060 Ohm, ID = 14A |
SD600N08PTC | IR | Standard recovery diode |