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S10PSC 40TPS12 ST380CH04C0 ST110S16P1 ST303C04HK3L SD203R14S10MBC IRFP344 SD303C04S10C 307U80P3 SD200N08PSC 301UA250 ST2100C30R0L IRG4PC30UD IRFZ44NSTRR IRU1205-25CL 302UR120PD IRLL110 45LF80 IRG4BC20UD 72UFR120AYPD SD600N04MSC IRF7704 303URA160P5 ST330C04C3L ST173S12MFK0 ST230S1

IR 元件資料手冊列表-154

型號品牌功能應用
SD500R36PTC IRStandard recovery diode
SD203R12S10PSC IRFast recovery diode
40TPS12 IRPhase control SCR
ST380CH04C0 IRPhase control thyristor
ST110S16P1 IRPhase control thyristor
ST303C04HK3L IRInverter grade thyristor
SD203R14S10MBC IRFast recovery diode
IRFP344 IRHEXFET power MOSFET. VDSS = 450 V, RDS(on) = 0.63 Ohm, ID = 9.5 A
SD303C04S10C IRFast recovery diode
307U80P3 IRStandard recovery diode
SD200N08PSC IRStandard recovery diode
301UA250 IRStandard recovery diode
ST2100C30R0L IRPhase control thyristor
IRG4PC30UD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRFZ44NSTRR IRN-channel power MOSFET for fast switching applications, 55V, 49A
IRU1205-25CL IR300mA ultra low dropout positive fixed 2.5V regulator
302UR120PD IRStandard recovery diode
IRLL110 IRN-channel MOSFET for fast switching applications, 100V, 1.5A
45LF80 IRStandard recovery diode
IRG4BC20UD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A
72UFR120AYPD IRStandard recovery diode
SD600N04MSC IRStandard recovery diode
IRF7704 IRHEXFET power MOSFET. VDSS = -40V, RDS(on) = 46mOhm, ID = -4.6A @ VGS = -10V. RDS(on) = 74mOhm, ID = -3.7A @ VGS = -4.5V.
303URA160P5 IRStandard recovery diode
ST330C04C3L IRPhase control thyristor
ST173S12MFK0 IRInverter grade thyristor
ST230S12M1V IRPhase control thyristor
SD103N25S15PC IRFast recovery diode
IRF5Y3710CM IRHEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.035 Ohm, ID = 18A
SD600N28MC IRStandard recovery diode

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