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Hexawave公司官方網站

最新Hexawave Datasheet PDF資料下載

型號功能應用
HWS306 GaAs MMIC SPDT switch
HWC34NC 12 W C-band power FET non-via hole chip
HWS301 GaAs MMIC SPDT switch
HWS303 GaAs MMIC SPDT switch
HWL30YRA 6 W L-band GaAs power FET
HWL34NC 12 W L-band power FET non-via hole chip
HWF1687RA 7.5 W L-band GaAs power FET
HWL34YRF 12 W L-band GaAs power FET
HWL26NPA 2 W L-band GaAs power FET
HWF1682RA 20 W L-band GaAs power FET
HWS2352 GaAs MMIC SPDT terminated switch
HWC27YC 3.5 W C-band power FET via hole chip
HWL34YRA 12 W L-band GaAs power FET
HWL30NPA 2.8 W L-band GaAs power FET
HWS305 GaAs MMIC SPDT switch
HWL30YRF 6 W L-band GaAs power FET
HWL27YRA 3.5 W L-band GaAs power FET
HWL27NC 3.5 W L-band power FET via hole chip
HWF1686NC 3.5 W L-band power FET non-via hole chip
HWL26YC 1.7 W L-band power FET via hole chip
HWL23NPB 0.7 W L-band GaAs power FET
HWL36YRA 15 W L-band GaAs power FET
HWL32NPA 2.8 W L-band GaAs power FET
HWS332 GaAs MMIC SPDT terminated switch
HWL32NPA 2.8 W L-band GaAs power FET
HWS332 GaAs MMIC SPDT terminated switch
HWL36YRF 15 W L-band GaAs power FET
HWC27NC 3.5 W C-band power FET non-via hole chip

Hexawave公司簡介

Hexawave, Inc. was established in 1991 with the goal of serving the rapidly growing wireless communication industry. The company is dedicated to developing, manufacturing, and marketing a wide range of GaAs based RF products. Headquartered in Hsinchu Science-Based industrial Park, the high-tech center of Taiwan, Hexawave has a 35,000 square ft. facility, which includes a class 100 GaAs wafer fab line, assembly and testing facility.

Hexawave Inc元件資料手冊列表

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