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W4TRD8R-0D00類似电子零件：

  • W4TRD0R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W4TRD8R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TRD8R-0D00 PDF資料和參數原理簡介

品牌 : Cree 

封裝形式 :  

引腳數量 : 0 

溫度範圍 : 最小 0 °C | 最大 0 °C

文件大小 : 306 KB

功能應用 : Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

W4TRD8R-0D00 PDF資料下載