| 型號 | 品牌 | 功能應用 |
|---|
| LHI968 | PerkinElmer | Dual element detector |
| VTB9412B | PerkinElmer | Process photodiode. Isc = 1.3 microA, Voc = 420 mV at H = 100 fc, 2850 K. |
| VTE1063 | PerkinElmer | GaAlAs infrared emitting diode. Irradiance(typ) 5.0 mW/cm2 at distance 36 mm, diameter 6.4 mm. |
| LC3012PGN-022 | PerkinElmer | Hihg performance, low-cost analog line scan camera. Resolution of 1024 pixels. Max data rate 10 MHz. |
| FX1162 | PerkinElmer | High output, short arc xenon flashlamp with internal reflector. Arc length 1.5mm. Window material VUV, average power(max) 20 watts, voltage 350-1000 Vdc. |
| LC3021PGC-022 | PerkinElmer | Hihg performance, low-cost analog line scan camera. Resolution of 512 pixels. Max data rate 20 MHz. |
| VTT1225 | PerkinElmer | .025 inche NPN phototransistor. Light current(min) 4.0 mA at H = 100 fc, Vce = 5.0 V. |
| VTE3374LA | PerkinElmer | GaALAs infrared emitting diode. Irradiance(typ) 5.2 mW/cm2 (distance 10.16 mm, diameter 2.1 mm). |
| VTE1281W-2 | PerkinElmer | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). |
| MH1962 | PerkinElmer | 3/4 inche CPM module. Input voltage 5V to +5.5V DC. Window material quartz. Dark current 10000pA @ 5 x 10^7 gain. |
| PE175B-10UV | PerkinElmer | Germax focused xenon arc lamp. Power 175 watts, current 14 amps (DC), operating voltage 12.5 volts (DC). |
| VTS3180 | PerkinElmer | Process photodiode. Isc = 3 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
| HSH2001NIEO | PerkinElmer | Lamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max). |
| HSH2000NIEO | PerkinElmer | Lamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max). |
| C911 | PerkinElmer | Channel photomultiplexer, 1/3 inche, window material MgF2, dark current 2 pA. |
| VTL11D5-20 | PerkinElmer | Optoswitch. Slotted switch with P.C.P. mount leads. LED emitter, phototransistor detector. 20 mil emitter aperture.. |
| MD1962 | PerkinElmer | Ultra high sensivity gateable photomultiplier DC-module. 3/4 inche DC photosensor module. Window material quartz. Dark current/offset voltage 300pA/15mV @ 1 x 10^6 gain & 1V/20nA. |
| VT33N2 | PerkinElmer | Photoconductive cell |
| HY-6 | PerkinElmer | Thyratron. Peak anode voltage epy 16 kV, peak anode current ib 350 a, average anode current lb 0.5 Adc, RMS anode current lb 6.5 Aac. Seated height x tube width 2 x 1.4 inches. |
| MVS4200 | PerkinElmer | Mashine vision strobe. Input voltage 90-230+-10% VAC 50/60 Hz, input current 2.0 amps (max), flashlamp voltage 600 volts +-3%, discharge power 20 watts(max). |
| PE1000DF | PerkinElmer | Germax focused xenon arc lamp. Power 1000 watts, current 51 amps (DC), operating voltage 19.5 volts (DC). |
| VTE1291-2 | PerkinElmer | GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). |
| MD963 | PerkinElmer | Ultra high sensivity gateable photomultiplier DC-module. 1/3 inche DC photosensor module. Window material UV glass. Dark current/offset voltage 30pA/1.5mV @ 1 x 10^6 gain & 1V/20nA. |
| VTL5C9 | PerkinElmer | Low cost axial VACTROL |
| PE300BUV | PerkinElmer | Germax xenon arc lamp. Power 300 watts, current 21 amps (DC), operating voltage 14 volts (DC). |
| C1963 | PerkinElmer | Channel photomultiplexer, 3/4 inche, window material UV glass., dark current 10000 pA. |
| VTE7173 | PerkinElmer | GaALAs infrared emitting diode. Irradiance(typ) 0.8 mW/cm2 (distance 16.7 mm, diameter 4.6 mm). |
| VTT3425LA | PerkinElmer | .025 inche NPN phototransistor. Light current(min) 3.0 mA at H = 20 fc, Vce = 5.0 V. |
| RL0512PAG-712 | PerkinElmer | Linear photodiode array imager. Window glass. 512 active pixels. |
| VTB6061UVJ | PerkinElmer | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. |
